0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SB736A features micro package. complementary to 2sd780a. high dc current gain: h fe = 200 typ. (v ce =-1.0v,i c =-50ma) absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo -80 v collector to emitter voltage v ceo -80 v emitter to base voltage v ebo -5.0 v collector current (dc) i c -300 ma total power dissipation p t 200 mw junction temperature t j 150 storage temperature range t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =-50v,i e = 0 -100 na emitter cutoff current i ebo v eb =-5.0v,i c = 0 -100 na dc current gain * h fe v ce =-1.0v,i c = -50 ma 110 400 base to emitter voltage * v be v ce =6.0v,i c = -10 ma -600 -660 -700 mv collector saturation voltage * v ce(sat) i c = -300 ma, i b = -30 ma -0.35 -0.6 v output capacitance c ob v cb =-6.0v,i e =0,f=1.0mhz 13 pf gain bandwidth product f t v ce =-6.0v,i e = 10 ma 100 mhz * pulsed: pw 350 s, duty cycle 2% h fe classification marking b51 b52 b53 b54 b55 h fe 110 180 135 220 170 270 200 320 250 400 sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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